 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NTE466 Silicon N-Channel JFET Transistor Chopper, High Speed Switch Absolute Maximum Ratings: Drain-Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Drain-Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Reverse Gate-Source Voltage, VGSR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40V Forward Gate Current, IG(f) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +175C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Gate-Source Breakdown Voltage Gate Reverse Current V(BR)GSS IG = 1A, VDS = 0 IGSS VGS(off) ID(off) VGS = -20V, VDS = 0 VGS = -20V, VDS = 0, TA = +150C Gate-Source Cutoff Voltage Drain Cutoff Current VDS = 15V, ID = 0.5nA VDS = 15V, VGS = -10V VDS = 15V, VGS = -10V, TA = +150C ON Characteristics Zero-Gate-Voltage Drain Current Drain-Source ON-Voltage Small-Signal Characteristics Drain-Source "ON" Resistance Input Capacitance Reverse Transfer Capacitance Switching Characteristics (Note 2) Turn-On Delay Time Rise Time Turn-Off Time td(on) tr toff VDD = 10V, ID(on) = 20mA, VGS(on) = 0, VGS(off) = -10V - - - - - - 6 3 25 ns ns ns rDS(on) Ciss Crss VGS = 0, ID = 0, f = 1kHz VDS = 0, VGS = -10V, f = 1MHz VDS = 0, VGS = -10V, f = 1MHz - - - - - - 25 18 0.8 pF pF IDSS VDS(on) VDS = 15V, VGS = 0, Note 1 ID = 20mA, VGS = 0 50 - - - - 0.75 mA V -40 - - -4 - - - - - - - - - 0.25 0.5 -10 0.25 0.5 V nA A V nA A Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width = 100ms, Duty Cycle 10%. Note 2. The ID(on) values are nominal; exact values vary slightly with transistor parameters. .230 (5.84) Dia Max .195 (4.95) Dia Max .210 (5.33) Max .030 (.762) Max .500 (12.7) Min .018 (0.45) Drain Source Gate 45 .041 (1.05) |
Price & Availability of NTE466
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |